Infineon · Thyristors & Power Discretes · MPN FS100R12W2T7B11
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| Td(off) | 300ns |
|---|---|
| Td(on) | 150ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 75pF |
| Input Capacitance(Cies) | 21.7nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 1.8uC@600V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.5V |
| Switching Energy(Eoff) | 6mJ |
| Turn-On Energy (Eon) | 6mJ |
80A 1.2kV IGBT Modules RoHS