Infineon FS100R12KE3

Infineon · Thyristors & Power Discretes · MPN FS100R12KE3

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Specifications

Pd - Power Dissipation480W
Current - Collector(Ic)140A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)7.1nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+125℃@(Tj)

Technical details

480W 140A 1.2kV IGBT Modules RoHS

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