Infineon · Thyristors & Power Discretes · MPN FP75R12KT4_B15
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| Td(off) | 340ns |
|---|---|
| Pd - Power Dissipation | 385W |
| Td(on) | 160ns |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 160pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@2.4mA |
| Gate Charge(Qg) | 570nC |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.25V@75A,15V |
| Switching Energy(Eoff) | 4.2mJ |
385W 75A 1.2kV FS (Field Stop) Through Hole,122x62mm IGBT Modules RoHS