Infineon FP75R12KT4

Infineon · Thyristors & Power Discretes · MPN FP75R12KT4

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Specifications

Td(off)340ns
Td(on)160ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)160pF
Input Capacitance(Cies)4.3nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Gate Charge(Qg)570nC@15V
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))1.85V
Switching Energy(Eoff)4.2mJ

Technical details

75A 1.2kV FS (Field Stop) IGBT Modules RoHS

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