Infineon · Thyristors & Power Discretes · MPN FP75R12KT4
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| Td(off) | 340ns |
|---|---|
| Td(on) | 160ns |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 160pF |
| Input Capacitance(Cies) | 4.3nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 570nC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.85V |
| Switching Energy(Eoff) | 4.2mJ |
75A 1.2kV FS (Field Stop) IGBT Modules RoHS