Infineon · Thyristors & Power Discretes · MPN FP75R07N2E4B16BOSA1
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| Pd - Power Dissipation | 20mW |
|---|---|
| Operating Temperature | - |
| Current - Collector(Ic) | 95A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 4.6nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.95V@15V,75A |
20mW 95A 650V FS (Field Stop) Single IGBTs RoHS