Infineon · Thyristors & Power Discretes · MPN FP50R12W2T7_B11
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| Td(off) | 265ns |
|---|---|
| Td(on) | 51ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.039nF |
| Input Capacitance(Cies) | 11.1nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@1.28mA |
| Gate Charge(Qg) | 0.92uC@600V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.5V@50A,15V |
| Switching Energy(Eoff) | 3.84mJ |
| Turn-On Energy (Eon) | 3.24mJ |
IGBT 1.2kV 50A Through Hole,62.8x56.7mm