Infineon · Thyristors & Power Discretes · MPN FP50R12N2T7BPSA1
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| Td(off) | 290ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 59ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 39pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,50A |
| Gate Charge(Qg) | 920nC@600V |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.5V |
| Switching Energy(Eoff) | 3.37mJ |
20mW 50A 1.2kV FS (Field Stop) IGBT Modules RoHS