Infineon · Thyristors & Power Discretes · MPN FP50R12KT4
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| Pd - Power Dissipation | 280W;160W |
|---|---|
| Td(off) | 430ns |
| Td(on) | 170ns;60ns |
| Current - Collector(Ic) | 50A;25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF;50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 200nC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.25V;- |
| Switching Energy(Eoff) | 8.4mJ;2.8mJ;4.3mJ;1.4mJ;2.2mJ;2.4mJ |
1.2kV FS (Field Stop) IGBT Modules RoHS