Infineon · Thyristors & Power Discretes · MPN FP50R12KT3
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| Td(off) | 420ns;520ns |
|---|---|
| Pd - Power Dissipation | 280W;210W |
| Td(on) | 90ns |
| Current - Collector(Ic) | 50A;75A;40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF;- |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Operating Temperature | -40℃~+125℃ |
| Gate Charge(Qg) | 470nC;330nC |
| Vce Saturation(VCE(sat)) | 1.7V;1.9V;- |
| Switching Energy(Eoff) | 4mJ;4.9mJ;3.1mJ;3.6mJ |
| Turn-On Energy (Eon) | 4.9mJ;6.6mJ;4.1mJ;6mJ |
1.2kV IGBT Modules RoHS