Infineon · Thyristors & Power Discretes · MPN FP50R06KE3GBOSA1
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| Pd - Power Dissipation | 190W |
|---|---|
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 3.1nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
190W 60A 600V FS (Field Stop) IGBT Modules RoHS