Infineon · Thyristors & Power Discretes · MPN FP40R12KT3G
No reviews yet — be the first to review Infineon FP40R12KT3G.
| Pd - Power Dissipation | 210W |
|---|---|
| Current - Collector(Ic) | 55A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.5nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.3V@15V,401A |
| Operating Temperature | -40℃~+125℃ |
210W 55A 1.2kV IGBT Modules RoHS