Infineon · Thyristors & Power Discretes · MPN FP40R12KT3
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| Pd - Power Dissipation | 210W |
|---|---|
| Td(off) | 420ns |
| Td(on) | 90ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 90pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1.5mA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+125℃ |
| Vce Saturation(VCE(sat)) | 1.8V@40A,15V |
| Reverse Recovery Time(trr) | - |
IGBT 1.2kV 40A 210W Through Hole,107.5x45mm