Infineon · Thyristors & Power Discretes · MPN FP35R12W2T7_B11
No reviews yet — be the first to review Infineon FP35R12W2T7_B11.
| Td(off) | 260ns |
|---|---|
| Td(on) | 37ns |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Input Capacitance(Cies) | 6.62nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.75mA |
| Gate Charge(Qg) | 548nC@600V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.6V@35A,15V |
| Switching Energy(Eoff) | 2.39mJ |
| Turn-On Energy (Eon) | 2.62mJ |
35A 1.2kV Through Hole,62.8x56.7mm IGBT Modules RoHS