Infineon · Thyristors & Power Discretes · MPN FP35R12W2T4
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| Td(off) | 240ns |
|---|---|
| Pd - Power Dissipation | 215W |
| Td(on) | 25ns |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 70pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@1.2mA |
| Gate Charge(Qg) | 270nC |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.85V@35A,15V |
| Reverse Recovery Time(trr) | - |
IGBT 1.2kV 35A 215W Through Hole,62.8x56.7mm