Infineon · Thyristors & Power Discretes · MPN FP35R12N2T7BPSA2
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| Td(off) | 250ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 51ns |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 23pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.75mA |
| Gate Charge(Qg) | 548nC |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.6V@35A,15V |
| Switching Energy(Eoff) | 2.22mJ |
IGBT 1.2kV 35A 20mW Through Hole,107.5x45mm