Infineon · Thyristors & Power Discretes · MPN FP35R12KT4
No reviews yet — be the first to review Infineon FP35R12KT4.
| Td(off) | 330ns |
|---|---|
| Pd - Power Dissipation | 210W |
| Td(on) | 160ns |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 270nC@15V |
| Vce Saturation(VCE(sat)) | 1.85V |
| Switching Energy(Eoff) | 3.1mJ |
210W 35A 1.2kV FS (Field Stop) IGBT Modules RoHS