Infineon · Thyristors & Power Discretes · MPN FP30R06W1E3
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| Pd - Power Dissipation | 115W |
|---|---|
| Td(off) | 140ns |
| Td(on) | 20ns |
| Current - Collector(Ic) | 37A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 51pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.9V@0.30mA |
| Gate Charge(Qg) | 300nC |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2V@30A,15V |
| Switching Energy(Eoff) | 600uJ |
115W 37A 600V FS (Field Stop) Through Hole,62.8x33.8mm IGBT Modules RoHS