Infineon FP25R12W2T7

Infineon · Thyristors & Power Discretes · MPN FP25R12W2T7

No reviews yet — be the first to review Infineon FP25R12W2T7.

Specifications

Td(off)190ns
Td(on)35ns
Current - Collector(Ic)25A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)17pF
Input Capacitance(Cies)4.77nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@0.525mA
Gate Charge(Qg)395nC@600V
Operating Temperature-40℃~+175℃
Vce Saturation(VCE(sat))1.82V@25A,15V
Switching Energy(Eoff)1.68mJ
Turn-On Energy (Eon)1.78mJ

Technical details

25A 1.2kV Through Hole,62.8x56.7mm IGBT Modules RoHS

Related Thyristors & Power Discretes