Infineon · Thyristors & Power Discretes · MPN FP25R12W2T4
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| Pd - Power Dissipation | 175W |
|---|---|
| Td(off) | 190ns |
| Td(on) | 26ns |
| Current - Collector(Ic) | 39A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 50pF |
| Input Capacitance(Cies) | 1.45nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@0.8mA |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.25V@25A,15V |
| Switching Energy(Eoff) | 1.45mJ |
175W 39A 1.2kV IGBT Module Through Hole,62.8x56.7mm IGBT Modules RoHS