Infineon · Thyristors & Power Discretes · MPN FP25R12W1T7
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| Td(off) | 200ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 37ns |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V@500uA |
| Gate Charge(Qg) | - |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.6V@25A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 2.1mJ |
25A 1.2kV IGBT Modules RoHS