Infineon · Thyristors & Power Discretes · MPN FP25R12KT4
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| Td(off) | 330ns |
|---|---|
| Pd - Power Dissipation | 160W |
| Td(on) | 160ns |
| Current - Collector(Ic) | 25A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.15V@15V,25A |
| Gate Charge(Qg) | 200nC |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2.15V@25A,15V |
| Switching Energy(Eoff) | 1.4mJ |
IGBT FS (Field Stop) 1.2kV 25A 160W Through Hole,107.5x45mm