Infineon · Thyristors & Power Discretes · MPN FP25R12KT3
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| Td(off) | 420ns |
|---|---|
| Pd - Power Dissipation | 155W |
| Td(on) | 90ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 64pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Gate Charge(Qg) | 240nC |
| Operating Temperature | -40℃~+125℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2.15V@25A,15V |
| Switching Energy(Eoff) | 1.8mJ |
IGBT 1.2kV 40A Through Hole,107.5x45mm