Infineon FP20R06W1E3

Infineon · Thyristors & Power Discretes · MPN FP20R06W1E3

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Specifications

Td(off)120ns
Pd - Power Dissipation94W
Td(on)20ns
Current - Collector(Ic)27A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)1.1nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V@0.3mA
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))2V@20A,15V
Switching Energy(Eoff)440uJ
Turn-On Energy (Eon)320uJ

Technical details

IGBT FS (Field Stop) 600V 27A 94W Through Hole,62.8x33.8mm

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