Infineon · Thyristors & Power Discretes · MPN FP200R12N3T7
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| Td(off) | 351ns |
|---|---|
| Td(on) | 203ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.14nF |
| Input Capacitance(Cies) | 40.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@4.6mA |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.8V@200A,15V |
| Switching Energy(Eoff) | 12.9mJ |
| Turn-On Energy (Eon) | 25.1mJ |
IGBT 1.2kV 200A Through Hole,122x62.5mm