Infineon · Thyristors & Power Discretes · MPN FP150R12N3T7B11BPSA1
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| Pd - Power Dissipation | - |
|---|---|
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 30.1nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+175℃@(Tj) |
150A 1.2kV IGBT Modules RoHS