Infineon · Thyristors & Power Discretes · MPN FP150R12N3T7
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 331ns |
| Td(on) | 172ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 105pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@3.5mA |
| Operating Temperature | -40℃~+175℃ |
| Gate Charge(Qg) | 2.5uC@600V,±15V |
| Vce Saturation(VCE(sat)) | 1.8V@150A,15V |
| Reverse Recovery Time(trr) | - |
IGBT 1.2kV 150A Through Hole,122x62.5mm