Infineon · Thyristors & Power Discretes · MPN FP150R12KT4B11
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| Current - Collector(Ic) | 150A |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 9.35nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,150A |
| Operating Temperature | -40℃~+150℃@(Tj) |
150A 1.2kV FS (Field Stop) IGBT Modules RoHS