Infineon · Thyristors & Power Discretes · MPN FP150R12KT4
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| Td(off) | 420ns |
|---|---|
| Td(on) | 160ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 410pF |
| Input Capacitance(Cies) | 9.35nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Operating Temperature | -40℃~+150℃ |
| Gate Charge(Qg) | 1.2uC@30V |
| Vce Saturation(VCE(sat)) | 2.1V |
| Switching Energy(Eoff) | 9.8mJ |
150A 1.2kV FS (Field Stop) IGBT Modules RoHS