Infineon · Thyristors & Power Discretes · MPN FP10R12W1T7
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| Td(off) | 150ns;250ns;305ns |
|---|---|
| Td(on) | 23ns;25ns;26ns |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 6.6pF |
| Input Capacitance(Cies) | 1.89nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 157nC@600V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.6V;1.74V;1.82V |
| Switching Energy(Eoff) | 1.25mJ;1.62mJ;1.87mJ |
| Turn-On Energy (Eon) | 730uJ;940uJ;1.13mJ |
10A 1.2kV IGBT Modules RoHS