Infineon · Thyristors & Power Discretes · MPN FP10R12W1T4
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| Td(off) | 180ns |
|---|---|
| Pd - Power Dissipation | 105W |
| Td(on) | 45ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 24pF |
| Input Capacitance(Cies) | 600pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@0.3mA |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.25V@10A,15V |
| Switching Energy(Eoff) | 550uJ |
| Turn-On Energy (Eon) | 900uJ |
105W 20A 1.2kV Through Hole,62.8x33.8mm IGBT Modules RoHS