Infineon · Thyristors & Power Discretes · MPN FP100R12N3T7B11BPSA1
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| Current - Collector(Ic) | 100A |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | - |
100A 1.2kV IGBT Modules RoHS