Infineon · Thyristors & Power Discretes · MPN FP100R12N2T7BPSA2
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| Td(off) | 324ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 171ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 0.076nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.5V@15V,100A |
| Gate Charge(Qg) | 1.8uC@600V,15V |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V |
| Switching Energy(Eoff) | 6.42mJ |
IGBT FS (Field Stop) 1.2kV 100A 20mW Through Hole,107.5x45mm