Infineon · Thyristors & Power Discretes · MPN FP100R12N2T7
No reviews yet — be the first to review Infineon FP100R12N2T7.
| Td(off) | 324ns |
|---|---|
| Td(on) | 171ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 76pF |
| Input Capacitance(Cies) | 21.7nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@2.5mA |
| Gate Charge(Qg) | 1.8uC@600V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.72V@100A,15V |
| Switching Energy(Eoff) | 6.42mJ |
| Turn-On Energy (Eon) | 10.4mJ |
IGBT 1.2kV 100A Through Hole,107.5x45mm