Infineon · Thyristors & Power Discretes · MPN FP100R12KT4
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| Td(off) | 330ns |
|---|---|
| Pd - Power Dissipation | 515W |
| Td(on) | 160ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 6.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@3.80mA |
| Gate Charge(Qg) | 800nC |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.2V@100A,15V |
| Switching Energy(Eoff) | 5.5mJ |
| Turn-On Energy (Eon) | 5.5mJ |
515W 100A 1.2kV Through Hole,122x62mm IGBT Modules RoHS