Infineon · Thyristors & Power Discretes · MPN FF900R12ME7B11
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| Td(off) | 550ns |
|---|---|
| Pd - Power Dissipation | 20mW |
| Td(on) | 410ns |
| Current - Collector(Ic) | 900A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 720pF |
| Input Capacitance(Cies) | 122nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.8V@15V,900A |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.75V@900A,15V |
| Switching Energy(Eoff) | 89mJ |
IGBT FS (Field Stop) 1.2kV 900A 20mW Screw Terminals