Infineon · Thyristors & Power Discretes · MPN FF900R12IP4DV
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| Pd - Power Dissipation | 5.1kW |
|---|---|
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 900A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 54nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
5.1kW 900A 1.2kV FS (Field Stop) Single IGBTs RoHS