Infineon · Thyristors & Power Discretes · MPN FF900R12IP4
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| Td(off) | 700ns |
|---|---|
| Pd - Power Dissipation | 5.1kW |
| Td(on) | 200ns |
| Current - Collector(Ic) | 900A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 2.8nF |
| Input Capacitance(Cies) | 54nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@33mA |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.1V@900A,15V |
| Switching Energy(Eoff) | 125mJ |
| Turn-On Energy (Eon) | 71mJ |
5.1kW 900A 1.2kV SMD,172x89mm IGBT Modules RoHS