Infineon · Thyristors & Power Discretes · MPN FF900R12IE4
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| Td(off) | 130ns;660ns;750ns |
|---|---|
| Pd - Power Dissipation | 5.1kW |
| Td(on) | 200ns;220ns |
| Current - Collector(Ic) | 900A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 3nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.75V;2.05V;2.1V |
| Switching Energy(Eoff) | 120mJ;130mJ |
| Turn-On Energy (Eon) | 55mJ;70mJ;80mJ |
5.1kW 900A 1.2kV FS (Field Stop) IGBT Modules RoHS