Infineon FF800R12KE7HPSA1

Infineon · Thyristors & Power Discretes · MPN FF800R12KE7HPSA1

No reviews yet — be the first to review Infineon FF800R12KE7HPSA1.

Specifications

Current - Collector(Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)122nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+175℃@(Tj)

Technical details

800A 1.2kV IGBT Modules RoHS

Related Thyristors & Power Discretes