Infineon · Thyristors & Power Discretes · MPN FF75R12RT4
No reviews yet — be the first to review Infineon FF75R12RT4.
| Pd - Power Dissipation | 395W |
|---|---|
| Td(off) | 300ns |
| Operating Temperature | -40℃~+150℃ |
| Td(on) | 130ns |
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 4.3nF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@2.4mA |
| Gate Charge(Qg) | 570nC |
| Vce Saturation(VCE(sat)) | 2.15V@75A,15V |
| Switching Energy(Eoff) | 4mJ |
| Turn-On Energy (Eon) | 6mJ |
395W 75A 1.2kV Screw Terminals Single IGBTs RoHS