Infineon · Thyristors & Power Discretes · MPN FF650R17IE4DB2
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| Pd - Power Dissipation | 4.15kW |
|---|---|
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 54nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃ |
4.15kW 1.7kV IGBT Modules RoHS