Infineon FF600R17ME4P

Infineon · Thyristors & Power Discretes · MPN FF600R17ME4P

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Specifications

Current - Collector(Ic)600A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)48nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃@(Tj)

Technical details

600A 1.7kV FS (Field Stop) IGBT Modules RoHS

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