Infineon FF600R12ME4CB11

Infineon · Thyristors & Power Discretes · MPN FF600R12ME4CB11

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Specifications

Pd - Power Dissipation4.05kW
Current - Collector(Ic)1.06kA
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)37nF@25V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,600A
Operating Temperature-40℃~+150℃@(Tj)

Technical details

4.05kW 1.06kA 1.2kV FS (Field Stop) IGBT Modules RoHS

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