Infineon · Thyristors & Power Discretes · MPN FF600R12ME4B11
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| Pd - Power Dissipation | 4.05kW |
|---|---|
| Current - Collector(Ic) | 995A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 37nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,600A |
| Operating Temperature | -40℃~+150℃@(Tj) |
4.05kW 995A 1.2kV FS (Field Stop) IGBT Modules RoHS