Infineon · Thyristors & Power Discretes · MPN FF600R12ME4_B72
No reviews yet — be the first to review Infineon FF600R12ME4_B72.
| Td(off) | 480ns |
|---|---|
| Td(on) | 160ns |
| Current - Collector(Ic) | 600A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 2.05nF |
| Input Capacitance(Cies) | 37nF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 4.4uC@15V |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.75V |
600A 1.2kV FS (Field Stop) IGBT Modules RoHS