Infineon FF600R12KF4NOSA1

Infineon · Thyristors & Power Discretes · MPN FF600R12KF4NOSA1

No reviews yet — be the first to review Infineon FF600R12KF4NOSA1.

Specifications

Pd - Power Dissipation3.9kW
Current - Collector(Ic)600A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)45nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-

Technical details

3.9kW 600A 1.2kV IGBT Modules

Related Thyristors & Power Discretes