Infineon FF600R12KE7

Infineon · Thyristors & Power Discretes · MPN FF600R12KE7

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Specifications

Td(off)490ns
Td(on)435ns
Current - Collector(Ic)600A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)462pF
Input Capacitance(Cies)92.3nF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.15V@12mA
Operating Temperature-40℃~+175℃
Gate Charge(Qg)9.66uC@600V,15V
Vce Saturation(VCE(sat))1.75V@600A,15V
Switching Energy(Eoff)53.2mJ

Technical details

IGBT 1.2kV 600A Screw Terminals

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