Infineon · Thyristors & Power Discretes · MPN FF600R12IE4P
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| Pd - Power Dissipation | 3.35kW |
|---|---|
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 600A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 37nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.05V@15V,600A |
3.35kW 600A 1.2kV FS (Field Stop) Single IGBTs RoHS