Infineon · Thyristors & Power Discretes · MPN FF450R33T3E3B5P6
No reviews yet — be the first to review Infineon FF450R33T3E3B5P6.
| Pd - Power Dissipation | 1000kW |
|---|---|
| Current - Collector(Ic) | 450A |
| Collector-Emitter Breakdown Voltage (Vces) | 3.3kV |
| Input Capacitance(Cies) | 84nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.75V@15V,450A |
| Operating Temperature | -40℃~+150℃@(Tj) |
1000kW 450A 3.3kV FS (Field Stop) IGBT Modules RoHS