Infineon FF450R33T3E3

Infineon · Thyristors & Power Discretes · MPN FF450R33T3E3

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Specifications

Td(off)1.71us
Td(on)530ns
Current - Collector(Ic)450A
Collector-Emitter Breakdown Voltage (Vces)3.3kV
Reverse Transfer Capacitance (Cres)2nF
Input Capacitance(Cies)84nF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Gate Charge(Qg)12.5uC@1800V
Operating Temperature-40℃~+150℃
Switching Energy(Eoff)415mJ
Turn-On Energy (Eon)500mJ

Technical details

450A 3.3kV FS (Field Stop) IGBT Modules RoHS

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